Transmissividade de spins polarizados em dupla barreira assimétrica

Abstract

The scattering matrix technique is used to calculate the transmissivity of polarized spins through semiconductors heterostructures of asymmetrical double barrier. The movement of electrons is described in the effective mass approach of the Dresselhaus-Rashba.models.The transmissivity and polarization are calculated as a function of electron energy with kk = 0.5 × 106 cm−1, kk = 1 × 106 cm−1, kk = 1.5 × 106 cm−1 e kk = 2 × 106 cm−1 varying the angle φ InAs/GaSb/InAs/GaSb/InAs system. Fixing the parallel moment kk and varying φ = 0◦, 15◦, 30◦, 60◦, 75◦, and 90◦ we observed that the positions of the resonant picks vary faintly with the energy and the transmission curves change more strongly in the areas out of the resonance with the polarization reaching values among 10% − 82% in the resonant levels.For the directions φ = 45◦ and 135◦ the spin mixing produces an efficiency of polarization of 100% and the effects of the Dresselhaus and Rashba spin-orbit interactions are shown quite favorable to the engineered for fabricating of spin filters and spintronics devices.