Estudo da não-linearidade induzida em microcavidades semicondutoras sob a ação de campos elétricos externos

Abstract

In this work we study the optical properties such as reflectance, dispersion and absorption, and the eff ects of nonlinear optics in a semiconductor planar microcavity formed bytwo DBR mirrors (Distributed Bragg Reector) composed by pairs of alternating layers of AlAs/Al0:2Ga0:8As, separated by a spacer layer Al0:3Ga0:7As which has at its center a GaAs quantum well thickness of 100 A. The upper and lower mirrors have 26.5 and 22 pairs of alternating layers, respectively. Reectance spectra were performed to analyze the behavior of the microcavity resonance when subjected to external electrical elds. For this, electrical contacts were made with silver paint on the faces of the sample and connected to an adjustable DC source. Voltages from 0 to 10 volts were applied so that a component of the electric eld that cross the sample in the normal direction to the surface. We characterize the nonlinear electric susceptibility, which shows a strong dependence on the applied electric eld. From the theoretical point of view, the re ectance was studied by transfer matrix method in order to nd a compatibility to the experimental results. The dispersion curve was modeled based on the Sellmeier equation, but with coe cients that depend on the concentration of aluminum alloy for semiconductor AlxGa1􀀀xAs, and applied electric eld. All measurements were made at room temperature.