Dinâmica de spins polarizados em heteroestruturas semicondutores

Abstract

We studied the dynamic properties of electrons in semiconductors heterostructure: barrier and quantum wells submitted to DC fields using the full Rashba-Dresselhaus Hamiltonian in E.F.A aproximation of the k · p method. The method used to calculate the electronic structure in quantum wells using the full spin-orbit Hamiltonian: Rashba-Dresselhaus is based on the thecnique of finite differences and in the method of inverse power. The dependent time Schroedinger equation is solved numerically using the time evolution operator, inside of the implicite outline of Cranck-Nicholson. We calculated the medium-displacements, tunneling probabilities and the polarizations spins too.